美股詳情

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Roundhill Memory ETF

59.10

+0.54000.92%

盤後：58.97-0.1300-0.22%19:59 EDT

成交量：2,207.80萬

成交額：13.07億

市值：259.46億

市盈率：- -

高：60.04

開：60.03

低：58.58

收：58.56

52周最高：81.34

52周最低：26.14

股本：4.39億

流通股本：4.39億

量比：0.68

換手率：5.03%

股息：- -

股息率：- -

淨資產收益率：--

總資產收益率：--

市淨率：--

市盈率(LYR):- -

資料載入中...

總覽公司新聞公告

美股盤前，存儲芯片股集體上漲，SK海力士漲2%，閃迪升逾1.7%，美光科技漲1%；大型科技股多數上漲，三大股指期貨集體上漲

存儲概念股午後拉升兆易創新（03986）漲4.29% 機構料26年全球內存收入將達8370億美元

三星、SK海力士加碼中國NAND產能，西安、大連工廠投資明年前陸續落地

华尔街见闻

分析：CXMT 產能見頂，DRAM 價格持續大漲

機構：內存持續短缺全球平板顯示器市場今年預計按年下降4.7%

美方據稱要求韓企投資當地存儲芯片工廠並保障供應

存儲芯片股再遭重挫，納指七連陰！現貨黃金突破4670美元

美國敦促韓國投資建設存儲芯片工廠

海力士工會成員投票否決了初步協議，50.1%的投票者投出反對票。

A股盤前速覽：美股收盤存儲芯片板塊重挫；「易中天」半年報出爐；油價跳水金價大漲；爆款基金扎堆提示風險；國家支持仿製藥高質量發展

報道：美國敦促韓國投資建設存儲芯片工廠

环球市场播报

報道：美國敦促韓國投資建設存儲芯片工廠

美國敦促韓國投資建設存儲芯片工廠。

深夜，美股存儲芯片、光通信跳水！英偉達7連跌，中國資產普跌

大河财立方

全球科技企業競逐存儲芯片賽道

美股存儲芯片股，集體下跌

異動解讀｜Roundhill Memory ETF盤中下跌5.06%，三星股東回報方案不及預期拖累全球存儲板塊

美股三大指數走勢分化存儲芯片板塊走弱

东方财富Choice...

兆易創新：預計DRAM價格下半年延續上漲 SLC NAND Flash的景氣周期至少延續2027年全年

三巨頭爭內存！未來怎麼走？

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10:59","pubTimestamp":1787626749,"startTime":"0","endTime":"0","summary":"AI服务器需求爆发，韩国存储双雄加速押注中国产线。三星电子将西安工厂升级为280层V9 NAND量产基地，月产能剑指5万片，补充投资订单年底落地；SK海力士同步在大连第二工厂提速扩产，目标月产3万片。","market":"other","thumbnail":"https://static.tigerbbs.com/83a889b72015cbc53a5f2d8fd313e1cc","type":0,"news_type":0,"thumbnails":["https://static.tigerbbs.com/83a889b72015cbc53a5f2d8fd313e1cc"],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":"92a7f5f4aa264c2793397c9dc1d602d4","theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://wallstreetcn.com/articles/3780197","is_publish_highlight":true,"source_rank":0,"column":"","sentiment":"0","news_top_title":"三星、SK海力士加码中国NAND产能，西安、大连工厂投资明年前陆续落地","news_tag":"corporation,movement","news_rank":0,"length":0,"strategy_id":0,"source":null,"symbols":["07347","HYNX","SKHX","DISK","BK4141","07709","EEMO","EDZ","SKDD","SKHYV","07747","SKHY","DRMY","SKHA","SKHU","MUG","DRAM","SKHZ","DRAL","MUD","MUZ","BK4585","MUU","MULL","RAM","MUYY","MIC","EMXC","BK4588","SKUU","SK","RAMZ","DRMP"],"isVideo":false,"video":null,"gpt_icon":1},{"id":"2662919207","title":"分析：CXMT 產能見頂，DRAM 價格持續大漲","url":"https://stock-news.laohu8.com/highlight/detail?id=2662919207","media":"链捕手","labels":["dataReport"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2662919207?lang=zh_tw&edition=fundamental","pubTime":"2026-08-25 09:03","pubTimestamp":1787619819,"startTime":"0","endTime":"0","summary":" ChainCatcher 消息，分析指出，中国主要 DRAM 厂商 CXMT 月度晶圆产出已在 2025 年末触及约 24 万片峰值，并预计 2026 年维持持平。受美国对先进半导体设备尤其是 EUV 光刻机出口管制收紧影响，其扩产能力受限，实质性扩产最早要到 2027 年，且取决于本土设备供应链进展。高盛数据显示，CXMT 对国内 DRAM 需求覆盖率 2026 年仅约 41%，2028 年约 50%，呈现多年结构性瓶颈。TrendForce 数据显示，传统 DRAM 合约价 2026 年一季度环比大涨 90%-95%，二季度再涨 58%-63%，Jefferies 预计三、四季度仍将分别上涨 40%-50% 与 30%-40%。服务器 DRAM 涨幅更陡，三星与 SK 海力士向微软、谷歌等客户提出一季度 60%-70% 涨价。S&amp;P Global 预计三星传统 DRAM 每比特收入 2026 年同比升 116% 至 0.79 美元，美光 ASP 升 54% 至 1.06 美元；Bernstein 预计 SK 海力士 DRAM 毛利率 2026 年四季度可达 92.7%。多方预测认为有效供应缓解最早要到 2027 年末甚至 2028 年。 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消息，据朝鲜日报报道，在美国政府加大对韩投资落实施压的背景下，美方近日向韩国政府和企业提出在美建设存储半导体生产设施、并保障稳定存储芯片供应等要求。针对韩方推进约 800 万亿韩元规模的湖南半导体集群计划，美方还非正式表达不满，认为韩方积极支持本土半导体投资、对赴美投资态度偏消极。这是美方在施压投资时首次提及韩政府主导的“超级项目”。产业通商资源部长官金正官近日访美开展对美投资谈判时亦涉及相关讨论。韩政府认为，美方半导体投资要求与两国此前达成的 3500 亿美元对美投资安排相互独立，并计划于 9 月公布首个对美投资项目。国内半导体企业担忧，在推进湖南集群的同时若再正式承接美国设厂要求，可能形成双重负担。另悉，外交部长官赵显当晚与美国国务卿鲁比奥通话，就对美投资及双边关系等交换意见。 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