美股詳情

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Tuttle Capital Memory Stack Income Blast ETF

21.65

+0.37521.76%

成交量：2.07萬

成交額：44.81萬

市值：627.85萬

市盈率：- -

高：21.89

開：21.47

低：21.47

收：21.27

52周最高：34.00

52周最低：17.26

股本：29.00萬

流通股本：29.00萬

量比：1.85

換手率：7.13%

股息：2.01

股息率：9.28%

淨資產收益率：--

總資產收益率：--

市淨率：--

市盈率(LYR):- -

資料載入中...

總覽公司新聞公告

高盛：存儲芯片下行周期最糟糕的階段或已結束

高盛：存儲芯片下行周期最糟糕的階段或已結束

A股三大股指低開高走，創業板翻紅，油氣、銀行活躍，存儲芯片拉升，恒指、恒科指齊跌超1%，蘋果概念股普遍下挫

华尔街见闻

高盛TMT大會第二日亮點：AI從概念走向商業化，閃迪判斷NAND供給將長期偏弱

华尔街见闻

存儲芯片股續漲江波龍（09976）升逾3% 高盛指早期投資者重新入場

存儲芯片概念盤初活躍太極實業漲停

鎧俠CEO喊話「內存價格漲夠了」，率先為NAND漲勢踩煞車震撼市場

手機漲價潮結束有沒有明確信號，咋判斷該不該入手

【美股盤前】美伊衝突推動布油突破100美元，美股期指承壓，存儲芯片股上漲，Meta升逾5%

TradingKey中文

美股存儲芯片股，盤前集體上漲

2026年存儲芯片港股IPO分化啓示錄：周期、估值與融資暗戰

美股盤前速遞：存儲芯片股集體上漲，SK海力士、閃迪升逾1%；納指期貨漲0.17%，大型科技股多數上漲，醫藥生物多數下跌；金銀油飆漲

花旗：NPO已取代CPO成近期首選交易邏輯，激光器與光纖正被定位為"下一個HBM"

鎧俠CEO淡化與SK海力士深化合作可能，擔憂NAND漲價過快衝擊AI投資

TradingKey中文

北京：攻關掌握存算一體芯片、硅基光電子、先進封裝與芯粒(Chiplet)、高性能光互聯等前沿芯片技術

OpenAI韓國負責人看好AI帶動的存儲芯片熱潮將延續

环球市场播报

OpenAI韓國負責人：對AI驅動存儲芯片熱潮將持續充滿信心

花旗TMT會議：NPO搶跑，CPO瓶頸是測試，光互聯是「下一個HBM

华尔街见闻

長鑫存儲 HBM3 試產良率停滯於 25%

兩大存儲芯片巨頭庫存告急！

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10:00","pubTimestamp":1789005624,"startTime":"0","endTime":"0","summary":"油气概念表现活跃，水发燃气涨停，凯添燃气、首华燃气、科力股份、通源石油、中曼石油跟涨。江苏银行、南京银行、成都银行、杭州银行齐创历史新高。早盘玻纤概念异动拉升，九鼎新材直线涨停，山东玻纤、国际复材、长海股份、宏和科技、中材科技跟涨。","market":"us","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":"6e7a4338b1034ad785d5025385d8625c","theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://wallstreetcn.com/articles/3781464","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"economic","news_rank":0,"length":0,"strategy_id":0,"source":null,"symbols":["CNXT","FTXL","000300.SH","159967","HHImain","07226","DRMP","159915","AAPY","DISK","02833","000905.SH","515890","510880","MUD","159982","399001","TTXU","XLK","09747","AAPD","HSImain","399006","ABFL","SAAPLmain","MHImain","000688.SH","ROM","JGRO","399300","RAM","AAPW","APLY","AAPX","IXN","AAPU","512880","DRAM","159195","512510","HSI","000001.SH","HBMX","TYLG","METV","03188","DRMY","161121"],"isVideo":false,"video":null,"gpt_icon":0},{"id":"2666551842","title":"高盛TMT大會第二日亮點：AI從概念走向商業化，閃迪判斷NAND供給將長期偏弱","url":"https://stock-news.laohu8.com/highlight/detail?id=2666551842","media":"华尔街见闻","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2666551842?lang=zh_tw&edition=fundamental","pubTime":"2026-09-10 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江波龍（09976）升逾3% 高盛指早期投資者重新入場","url":"https://stock-news.laohu8.com/highlight/detail?id=2666236559","media":"金吾财讯","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2666236559?lang=zh_tw&edition=fundamental","pubTime":"2026-09-10 09:44","pubTimestamp":1789004653,"startTime":"0","endTime":"0","summary":"金吾财讯 | 港股存储芯片股延续涨势，截至发稿，江波龙 涨3.05%，澜起科技涨2.06%，兆易创新涨1.29%。消息面上，隔晚美股存储芯片板块持续走强，高盛新近研报进一步提振板块信心。研报中，高盛将此次存储股上涨定性为早期投资者重新入场的信号。高盛认为，当前市场对半导体周期性风险的情绪仍偏谨慎，而对于低配该板块的基金而言，“痛苦交易”方向已转向上行。","market":"other","thumbnail":"https://static.szfiu.com/news/20241108/MmRhZGRhNjQ0NTZmM2ZiNTY3MTMzODA5NjE3MTg=.jpg","type":0,"news_type":0,"thumbnails":["https://static.szfiu.com/news/20241108/MmRhZGRhNjQ0NTZmM2ZiNTY3MTMzODA5NjE3MTg=.jpg"],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":"299f0a9977df499f8ead781071e5e5e7","theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"1991227","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":null,"symbols":["LU0052750758.USD","06809","03986","LU0067412154.USD","LU0072913022.USD","LU2237443978.SGD","BK4127","09747","LU0345770308.USD","LU0868494708.USD","RAM","GSX","IE0004091025.USD","LU2265009873.SGD","LU2039709279.SGD","LU2237443382.USD","LU2471134952.CNY","DRMP","LU2237443622.USD","MIC","09976","LU0345770993.USD","LU0061475181.USD","MULL","MUG","301308","MUYY","HBMX","LU1807302812.USD","LU0210536198.USD","MUD","LU2896262040.SGD","MUU","LU2750360641.GBP","LU1868837300.USD","FTXL","BK4585","LU0106831901.USD","DRAM","LU0314109678.HKD","RAMZ","DRAL","LU2237438978.USD","BK4552","MUZ","LU1152091754.HKD","DRMY","IE0034235188.USD","DISK","IE00B19Z3B42.SGD"],"isVideo":false,"video":null,"gpt_icon":0},{"id":"2666559107","title":"存儲芯片概念盤初活躍 太極實業漲停","url":"https://stock-news.laohu8.com/highlight/detail?id=2666559107","media":"智通财经","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2666559107?lang=zh_tw&edition=fundamental","pubTime":"2026-09-10 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Kim，他在首尔举办的分公司成立一周年新闻发布会上发表了上述看法。本月初OpenAI发布最新大模型GPT6Astra之后，他再度对AI存储芯片的市场热潮表达乐观态度。OpenAI表示，随着GPT-6Astra落地部署，预计上述增长趋势还将进一步加快。OpenAI已于6月中旬在韩国推出搭载广告的AI服务，面向ChatGPT基础版本。","market":"us","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://finance.sina.com.cn/stock/usstock/c/2026-09-09/doc-inirfivu5621847.shtml","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":"sina","symbols":["DRMP","DRMY","HBMX","AGIX","RAMZ","09747","MUG","MUD","QTOC","VTHR","CHAT","MUU","MULL","DRAL","AIPO","MUZ","ARTY","FTXL","RAM","DRAM","MIC","BK4588","DISK","MUYY"],"isVideo":false,"video":null,"gpt_icon":0},{"id":"2666048093","title":"OpenAI韓國負責人：對AI驅動存儲芯片熱潮將持續充滿信心","url":"https://stock-news.laohu8.com/highlight/detail?id=2666048093","media":"格隆汇","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2666048093?lang=zh_tw&edition=fundamental","pubTime":"2026-09-09 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11:03","pubTimestamp":1788922991,"startTime":"0","endTime":"0","summary":"花旗记录了Lightmatter管理层访谈要点。管理层表示，NPO（近封装光学）将于2027年入市、2028年大规模普及，CPO规模化时间线维持2028-2029年不变。管理层将激光器和光纤定性为\"下一个HBM\"，供给紧张预期支撑稀缺溢价。CPO瓶颈在于测试产能而非技术本身，相关测试设备存在被低估的投资机会。","market":"other","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":"6e7a4338b1034ad785d5025385d8625c","theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://wallstreetcn.com/articles/3781368","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":null,"symbols":["LU0128525689.USD","BK4588","LU1244550494.USD","LU1267930227.SGD","DISK","LU0314106906.USD","LU1162221912.USD","RAMZ","BK4534","LU2462157665.USD","MUYY","MIC","DRMY","LU2417539215.USD","IE0034390439.USD","IYF","DRAM","LU1506573853.SGD","MULL","MUZ","MUD","RAM","HBMX","BK4161","BK4559","LU0320765646.SGD","TFNS","LU1244550221.USD","LU1559883803.SGD","LU1366192091.USD","LU0310800965.SGD","LU0477156953.USD","LU1791807156.HKD","LU2456880835.USD","DRAL","LU2065732104.USD","LU0203347892.USD","LU2125154935.USD","MUG","DRMP","LU0648001328.SGD","FTXO","LU0170899867.USD","NPO","LU2236285917.USD","IE00B19Z6F94.USD","LU0106831901.USD","LU2125154778.USD","MUU","IE00BSNM7G36.USD"],"isVideo":false,"video":null,"gpt_icon":1},{"id":"2666657305","title":"長鑫存儲 HBM3 試產良率停滯於 25%","url":"https://stock-news.laohu8.com/highlight/detail?id=2666657305","media":"链捕手","labels":["dataReport"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2666657305?lang=zh_tw&edition=fundamental","pubTime":"2026-09-09 08:23","pubTimestamp":1788913423,"startTime":"0","endTime":"0","summary":" ChainCatcher 消息，据朝鲜日报报道，中国最大 DRAM 厂商长鑫存储（CXMT）已启动第四代高带宽存储器 HBM3 试验生产，初期良率停滞在 25%，约为量产黄金良率 80% 的三分之一。SK 海力士自 2022 年起量产同类产品，良率超过 90%。长鑫存储 HBM3 8 层堆叠产品前道工序良率约 30%，后道工序后约 70% 成为最终良品。公司将少量样品供应给阿里巴巴平头哥、寒武纪等中国企业并持续改善良率。其 G4（17 纳米级）工艺普通 DRAM 无大问题，但 HBM 用 DRAM 芯片面积更大、电气规格更严格。业界将原因指向硅通孔 TSV 技术成熟度不足。Nomad Semi 分析显示，三星 HBM2 每芯片 TSV 超 5000 个，SK 海力士 HBM3 超 8000 个，长鑫存储约 3000 个。与三星、SK 海力士存在 4 至 5 年差距。 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